Paper Titles

Effect of Selective Doping on Photo- and Electroluminescence Efficiency in Si:Er Structures
p.629

The Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron Sputtering
p.637

Defect Engineering in the Technology of Light-Emitting Structures Based on Monocrystalline Si Implanted with Rare Earth Ions
p.645

Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping
p.651

Spectroscopic Characterisation of Erbium Impurity in Crystalline Silicon
p.657

Nanocrystal MOS Memories Obtained by LPCVD Deposition of Si Nanograins
p.663

Memory Effects in Single-Electron Nanostructures
p.669

Nanocrystal MOS with Silicon-Rich Oxide
p.675

Self-Orientation of Silicon Nanocrystals Created under Pulse Laser Impact in Stressed α-Si:H Films on Glass Substrates
p.681

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Spectroscopic Characterisation of Erbium Impurity...

Spectroscopic Characterisation of Erbium Impurity in Crystalline Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IX

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

657-662

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.657

Citation:

Cite this paper

Online since:

November 2001

Authors:

C.A.J. Ammerlaan, Ingrid de Maat-Gersdorf

Keywords:

Energy Levels, Erbium, Magnetic Resonance, Optical Spectroscopy, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: