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Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping
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Spectroscopic Characterisation of Erbium Impurity in Crystalline Silicon
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Nanocrystal MOS Memories Obtained by LPCVD Deposition of Si Nanograins
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Memory Effects in Single-Electron Nanostructures
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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Nanocrystal MOS Memories Obtained by LPCVD...

Nanocrystal MOS Memories Obtained by LPCVD Deposition of Si Nanograins

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

663-668

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.663

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Online since:

November 2001

Authors:

M. Vulpio, C. Gerardi, Salvatore Lombardo, G. Ammendola, I. Crupi, T. Rossetti, N. Nastasi, G. Mantarro, G. Nicotra

Keywords:

Memory Effects, Nanocrystal, Quantum Dot (QD)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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