Paper Titles

Luminescence from Si Nanocrystals and Er³⁺ Ions Embedded in Resonant Cavities
p.617

Temporal Characteristics of the Optical Storage Effect in Si:Er
p.623

Effect of Selective Doping on Photo- and Electroluminescence Efficiency in Si:Er Structures
p.629

The Structure and Photoluminescence of Erbium-Doped Nanocrystalline Silicon Thin Films Produced by Reactive Magnetron Sputtering
p.637

Defect Engineering in the Technology of Light-Emitting Structures Based on Monocrystalline Si Implanted with Rare Earth Ions
p.645

Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping
p.651

Spectroscopic Characterisation of Erbium Impurity in Crystalline Silicon
p.657

Nanocrystal MOS Memories Obtained by LPCVD Deposition of Si Nanograins
p.663

Memory Effects in Single-Electron Nanostructures
p.669

HomeSolid State PhenomenaSolid State Phenomena Vols. 82-84Defect Engineering in the Technology of...

Defect Engineering in the Technology of Light-Emitting Structures Based on Monocrystalline Si Implanted with Rare Earth Ions

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology IX

Info:

Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

645-650

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.645

Citation:

Cite this paper

Online since:

November 2001

Authors:

N.A. Sobolev

Keywords:

ER, Ho, Light Emitting Devices, Luminescence, Silicon, Solid-Phase Epitaxy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: