Low-Temperature Formation of Si-Nanocrystal Dots from Chlorinated Materials by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition and Optical Properties

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Periodical:

Solid State Phenomena (Volume 93)

Edited by:

T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner

Pages:

275-280

DOI:

10.4028/www.scientific.net/SSP.93.275

Citation:

H. Shirai et al., "Low-Temperature Formation of Si-Nanocrystal Dots from Chlorinated Materials by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition and Optical Properties ", Solid State Phenomena, Vol. 93, pp. 275-280, 2003

Online since:

June 2003

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$35.00

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