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HomeSolid State PhenomenaSolid State Phenomena Vol. 93Towards Complementary Metal-Oxide-Silicon...

Towards Complementary Metal-Oxide-Silicon Thin-Film Devices with a New Structure

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Polycrystalline Semiconductors VII

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

429-434

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.429

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Online since:

June 2003

Authors:

Gaёl Gautier, C.E. Viana, S. Crand, R. Rogel, N.I. Morimoto, O. Bonnaud

Keywords:

Complementary Metal-Oxide-Silicon Technology, Glass Substrate, Low Pressure Chemical Vapor Deposition, Polycrystalline Silicon, Thin Film Transistor

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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