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Online since: April 2023
Authors: Ahmed Basim Taha, Mohammed Shaalan Essa, Bahaa Toama Chiad
Iron oxides are substances created chemically when iron and oxygen combine, the number of identified iron oxides in nature is roughly 16, as well.
All samples are corresponding to the JCPDS no. 019-0629 of magnetite.
The prepared sample at 2.5 h shows a peak of hematite (α-Fe2O3) observed besides the peaks of magnetite at around 33.11° accordance with the crystal plane of (104) of hematite (JCPDS card no. 33-0664).
The number of particle distributions and their particle size for SEM analysis was calculated by Image J software for the sample prepared at 1.5 hours and 100 °C by hydrothermal method.
Mansour, Sol-gel synthesis and physical characterization of high impact polystyrene nanocomposites based on Fe2O3 doped with ZnO, Appl.
Online since: August 2017
Authors: M. Balasubramaniam, S. Balakumar
Introduction Supercapacitors have superior advantages such as stable for a vast number of charge/discharge cycles, safe, wide operation temperature range, high power density and consistent [1].
The pattern confirmed the formation of single phase tetragonal crystal structured [15, 22] nanostructures of zinc antimonate and the Bragg’s reflections obtained were indexed to standard JCPDS card no. 38-0453.
[5] Kalpana D, Omkumar KS, Suresh Kumar S, Renganathan NG, A novel high power symmetric ZnO/carbon aerogel composite electrode for electrochemical supercapacitor,Electrochimica Acta, 52 2006 1309-1315
Online since: June 2014
Authors: Chesta Ruttanapun, Aree Wichainchai, Chalermpol Rudradawong, Aparporn Sakulkalavek, Yuttana Hongaromkid
The first step, the polycrystalline of CuFeO2 samples examined by XRD measurements, the XRD patterns of all CuFeO2 exhibited in the Fig. 1 shows phases of 3R-CuFeO2 type by confirmed by standard JCPDS card number 39-0246.
Majid, X- ray analysis of ZnO nanoparticles by Williams-Hall and size-strain plot Methods.
Online since: September 2011
Authors: Hui Xu, Yuan Guo Xu, Shuo Wiei Zhao, Hua Ming Li
It could be seen that all the diffraction peaks could be indexed to monoclinic Ag3VO4 according to JCPDS card no. 43-0542.
The excess Co (>1 wt.%) covering on the surface of Ag3VO4 could increase the number of recombination centers, so decreased photocatalytic activity.
Boule, Photocatalytic degradation of 2-phenylphenol on TiO2 and ZnO in aqueous suspensions.
Online since: March 2016
Authors: Huda Abdullah, Sahbudin Shaari, Badariah Bais, Mohd Syafiq Zulfakar, Wan Nasarudin Wan Jalal, Mohammad Tariqul Islam, Sarada Idris
According to JCPDS card No. 00-005-0669, 00-021-1276, and No. 00-021-1272 respectively, ZnAl2O4, rutile and anatase phases exist in the sintered samples.
The calculated a of ZnAl2O4 (8.0848 Å) was in agreement with the reported value a=8.083–8.095 Å [12, 18, 19], theoretical value (8.05 Å), and JCPDS File Card No. 00-005-0669.
The bands observed in the low-frequency region of the spectrum 487-550 cm-1 correspond to the ZnO, TiO2 and AlO6.
Furthermore, for the un-doped TiO2, the band correspond to the bending mode of ZnO and AlO6 which is the built up of ZnAl2O4 spinel appeared at 487 cm-1 [22].
The increase in relative density may be caused by the decrease in the number of pores and able to increase the εr [16].
Online since: September 2020
Authors: Sathasivam Radhika, C.M. Padma, J.R. Sheeba
The diffraction peaks were in harmony with JCPDS card no: 41-1445 and it belongs to the tetragonal rutile structure [10].
Number of unit cell in the crystal is calculated using the relation n= πD3/6V (4) where D is the crystallite size and V is the volume of the unit cell[18].
The number of unit cell in the crystallite increases as the crystallite size increases and is given in table 1.
Yun, Effect of structural defects, surface roughness on sensing properties of Al doped ZnO thin films deposited by chemical spray pyrolysis technique, Ceram.
Ibrahim, “Structural and DC electrical investigations of ZnO thin films prepared by spray pyrolysis technique,” Physica B: Condensed Matter, vol. 296, no. 4, pp. 319–325, 2001
Online since: January 2007
Authors: Dong Ying Ju, Pei Bian
Conventional fabrication process is as the following: reagent-grade materials of NiO, MnO2, CuO, ZnO and Fe2O3 were mixed to yield a composition.
OHmnClNHOmHOMeCOnHMeClOHOCNH 2 4 242 22 24224 )1(2 )( −+++↓⋅→⋅+⋅ (1) where Me are Ni, Mn, Cu, Zn and Fe ion. m and n are the number of hydrate .
Comparing the measured XRD patterns with JCPDS cards, it was confirmed that high purified spinel ferrite was obtained by the above method.
Online since: December 2016
Authors: Kristaps Rubenis, Janis Locs
Results and Discussion All of the observed reflexes in the recorded diffraction patterns for all of the synthesized products regardless of whether the co-solvent was used or not (Fig. 1.) can be attributed to the tetragonal cassiterite phase of SnO2 (JCPDS card No. 00-041-1554).
If short-carbon-chain alcoholic co-solvents were used (methanol, ethanol, 2-propanol), the SSA of the synthesized material decreases with an increasing number of carbon atoms in the used co-solvent molecule.
Xu, Evolution of ZnO microstructures from hexagonal disk to prismoid, prism and pyramid and their crystal facet-dependent gas sensing properties, CrystEngComm, 16 (2014) 70620-7073
Online since: April 2023
Authors: Emad K. Al-Shakarchi, Zaid K. Alkaabi
That was indexing by standard cards represented by JCPDS-ICDD 41-374 and 42-743.
It is necessary to produce higher number of high peaks in comparable to low peaks to insure the presence of high temperature superconductor.
Synthesis and Characterization of ZnO Nanoparticles via Aloe Vera Extract.
Online since: June 2015
Authors: Silvania Lanfredi, Eliane Ayumi Namikuchi, Marcos Augusto Lima Nobre, Ana Maria Pires
Results and Discussion Crystalline and single phase based on the K2NdNb5O15 host structure exhibited only a set of diffraction lines ascribed to the TTB-type structure, which was identified from the JCPDS card number 39-0237, with tetragonal symmetry and space group P4bm.
However, the values derived in this work are compatible with typical semiconductor bandgap values found in the literature, such as ZnO having a value of 3.37 eV [16, 17].