Search results

The data related to manufacturing were collected and evaluated the performance of the current facility design using E-VSM and found ways to reduce energy consumption and production cost.
All pertinent data, such as cycle time, is captured in data boxes.
Current State Map Fig.1 shows the current state map developed based on the data collected from the shop floor.
In a machining operation, the material is removed as per the data given as input through the program and then the product moves to the next station where the pressing operation is processed.
Due to the reduction of the cycle time production rate of the product gets increased.

According the IBGE data (Census 20010 [1]), there are currently in Brazil about 57,300,000 households considered private and permanent.
The last official data from the IBGE [1] concerning the type of Brazilian housing showed an increase of 43% in the number of apartments in the last decade (2000-2010), from 4,300,000 for 6,100,000.
Data from the João Pinheiro Foundation [12], present in Table 3, show that 83% of the Brazilian housing deficit corresponds to families who earn up to three minimum wages.
Table 16 - Comparative data in function of the estimate energy embodied [73].
[17] IBGE, National Research for sample of Domiciles-2005 micro-data.

The real-time vibration signals acquired from field need to be noise reduction, removal of disturbances by digital signal processing technique.
(2) Data preprocessing: process vibration and cable force signals in order to reduce interference by noise reduction, wavelet denoising and so on
(6) Data upload: remote data publishing.
There is no data storage thread in this system, and the data storage is included in data processing thread.
Distribution of network data.

Comparison of temperatures in the corner of wall footing through 2D and 3D views Tomáš Pospíšil1, a, Jan Pěnčík2,b 1,2Brno University of Technology, Faculty of Civil Engineering, Institute of Civil Engineering, Veveri 331/95, 602 00 Brno, Czech Republic apospisil.t@fce.vutbr.cz , bpencik.j@fce.vutbr.cz Keywords: wall footing, composite, thermal bridge, elimination, temperature reduction Abstract.
This reduction in temperature in the corners is neglected in the design.
Data arranged in Table 2 implies that steady-state temperature in the corner of the walls foundation is higher when using 2D modeling than when 3D modeling.

The load-displacement data shows a typical elastic-plastic behavior at low penetration depth, which is thus allowed to calculate the nano-mechanical properties of this titania layer.
However, in the presence of H2O2, the rapid generation of a strong reduction peak is observed when the negative potential is only below −0.20 V, which is due to electrochemical reduction of H2O2 on TiO2 semiconductor (see Fig. 4a, b).
Concerning the reduction peak position and strength, a much stronger reduction peak can form when applying a more negative potential.
It means the electrochemical reduction is very accessible for H2O2 on pure TiO2 nanotube array.
Obviously, the reduction current has been greatly reinforced along with the increase of cathodic potential on GOD-TiO2/Ti electrode.

However, the reduction by ethanol or methanol often leads to the side alkoxysubstitition [1].
There are a lot of other reagents and methods for the reduction of diazonium salts, though not all of them are useful as a preparative procedure.
In this paper, we would like to describe the reduction of ADT by means of Fe-core/carbon shell nanoparticles (Fe@C).
In this case, Fe@C nanoparticles do not only accelerate the decomposition of ADT in aqueous solutions, but also radically change the direction of the reaction, because only nitrobenzene acts as a decomposition product 1a and p-nitrophenol is not fixed even in trace quantities (GC-MS data) (Scheme 2).
Sehested, Reduction of substituted benzenediazonium salts by hydrogen atoms in aqueous acidic solution studied by pulse radiolysis, J.

In contrast, the {411}<148> recrystallization texture, which is obtained from higher cold-rolling reduction (over 90% in thickness), deteriorates formability.
Ingot Soaking (1200 °C) →Hot rolling (2.0 mm thickness) Pre-cold rolling (1.5 mm thickness, reduction: 25%) Decarburizing (750 °C, 180 min in Air → F.
Cold rolling (0.075 mm thickness, reduction: 95%) Normalizing (1100 °C, 60 min → W.
The cold-rolling textures after 95% reduction are shown in Fig. 3.
Each KAM value, which represents the average misorientation angle between the data point and all of the neighbors, corresponds to the localized plastic strain.

The data reveal the presence of a long lifetime component related to the o-Ps.
It is observed that the addition of garlic (or marjoram) oil to β-CD results in a decrease of the o-Ps lifetime which was ascribed to a reduction of the free volume holes from 83.6 to 67.7 Å3 (79.1 to 72.6 Å3).
The same figure condensates data for the encapsulation of both garlic and marjoram oils.
The common behavior of I3 agrees well with the reduction of free volumes in the hollow truncated cone of the β-CD due to the inclusion of guest molecules.

Cracks may initiate debonding, affect the aesthetics of the repair and result in an overall reduction in durability.
The data acquisition system on the Zwick UTM was started and a uniaxial tensile force equivalent to 80% of the ultimate direct tensile strength of the specimen applied.
The stress in each specimen was recorded continuously using the data acquisition system and specialised software.
Precipitation would result in a pore-blocking effect that would manifest as a reduction in macroporosity.
This reduction is statistically significant at a level of significance of 5%.

Manufacturers of data servers, telecom systems, solar power inverters and drives for motor control are focused on reducing power conversion losses while simultaneously shrinking the size of power systems.
Comparing to similarly-rated state-of-the-art Si super-junction MOSFETs on the market, the GaN devices offer significant reduction in gate charge, on-resistance and output capacitance.
GaN solutions enable high frequency (high density) operation of Boost/PFC with 70% los reduction over Silicon Super-junction.
GaN/Si and GaN/SiC HEMT leakage comparison data shows minimal impact of disclocations/GaN-Si material on achieving comparable and lower leakage than GaN on SiC devices.
To get further confidence for longer term operation, we completed 2000 hours high temperature operating life (HTOL) data on GaN HEMTs running in actual boost power converters at 300 KHz providing 1:2 (200V to 400V DC) boost operation.