Books by Keyword: Diffusion

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 20th century was a period during which many new sciences and engineering techniques appeared and evolved, and were applied to industrial applications. Towards the end of that century, however, it was recognized that - in many cases - the industrial technologies that underpin current-day society suffered from wider sociogical deficiencies. The usual engineering approaches began to face many difficulties which arose from the high habitual levels of consumption of energy and resources.. Energy sources, and supplies of various resources, have already begun to diminish in the 21st century. These limitations on energy and resources require science and technology to adapt quickly to this new regimen.

Description: The continued development of advanced materials and processes requires an intimate understanding of diffusion mechanisms, and having the ability to model the diffusion-controlled phenomena which occur within materials during processing.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys.

Description: The question of the interrelationship between diffusion and stress is almost as old as the investigation of diffusion itself. Nowadays, the study of various diffusion and solid-state reaction processes in thin films and multilayers is a vital area of research activity in which, inevitably, diffusion-induced or thermal stresses are of primary importance.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: The diffusion of atoms is an inherent feature of matter, and the rules which describe the phenomenon are important from both the purely practical and the theoretical perspectives: it is a major rate-controlling process in phase transformations, crystal growth, recrystallization and recovery, creep, sintering, surface treatment and many other situations. Being typically a non-equilibrium macroscopic phenomenon, diffusion can be properly described in terms of the thermodynamics of irreversible processes. At the same time, phenomenological diffusion characteristics represent the mean values of microscopic parameters and reflect the microscopic structure of matter. In the latter case, they contribute to providing a deeper understanding of the physical background to the observed behavior of matter in general.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This ninth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VIII (Volumes 245-246) and the end of January 2007 (journal availability permitting).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This collection presents 26 papers. Altogether, the collection offers a wealth of up-to-date information on Mass and Charge Transport in Inorganic Materials.

Description: This collection presents 18 papers. Altogether, the collection a wealth of offers up-to-date information on Biomedical Applications of Nano Technologies.