Books by Keyword: Diffusion

Description: This book is divided into two parts: the first part describes diffusion processes, and the second part describes radiation damage to - and cold-working of - zirconium and some of its important alloys.

Description: This book offers a contemporary overview of nanodiffusion, and details the present state of this rapidly growing field. New conceptions of basic aspects of the diffusion processes occurring at the nanoscale are treated, and many useful insights and results concerning diffusion kinetics in various types of technologically important nanomaterials are presented. The latter include: nanomagnetic materials, consisting of a mixture of magnetic nanoparticles in a residual amorphous magnetic matrix; thin films, bi-layers and multilayers for X-ray or neutron mirrors and for magneto-electronic applications such as GMR; and semiconductor nanosystems for many current and future applications.

Description: This latest volume of the annual series contains over 900 selected abstracts of research in the field of ceramics (including, for this purpose, allotropes of carbon); reported between the appearance of Retrospective IV and about June 2003 (allowing for variations in publication dates).

Description: The issues addressed by the Sixth International Symposium on the Ultra Clean Processing of Silicon Surfaces included all aspects of ultra-clean Si-technology, cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This covered studies of Si-surface chemistry and topography and its relationship to device performance and process yield, cleaning in relationship to new gate stacks, cleaning at the interconnect level, resist stripping and polymer removal, cleaning and contamination control of various new materials, wafer backside cleaning and cleaning following Chemical-Mechanical-Polishing (CMP).

Description: This issue covers, in the form of abstracts, the work which has been reported between the previous retrospective and the end of 2002. The choice of abstracted papers is guided by criteria such as accessibility, data content and description of important new techniques, phenomena or anomalies. There is also a thorough coverage of qualitative features of diffusion and defect phenomena, computer modelling and theory. The volume also includes invited review and experimental papers which treat a wide range of topics in the field.

Description: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.

Description: This issue covers, in the form of abstracts, the work which has been reported between the previous retrospective and the end of 2001. The choice of abstracts is guided by criteria such as accessibility, data content and description of important new techniques, phenomena or anomalies. But there is also a thorough coverage of more qualitative features of diffusion and defect phenomena, computer modelling and theory. The volume also includes, as usual, a number of invited review and experimental papers which treat a wide range of topics in the field.
The more theoretical review papers presented here cover the modelling of intergranular segregation and diffusion in alloys, as well as the impact of electron theory. The more practical aspects of diffusion are described by reviews concerning interdiffusion in coatings and long-term thermomechanical behaviour.

Description: Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Electroceramics are among the most interesting and useful materials for electronic devices, and various other high-technology applications. This book series presents the latest research results for the electroceramics in Japan.

Description: This book covers, on close to 2000 pages, all aspects of basic and applied diffusion research in all important engineering materials, including metals and intermetallics, elemental and compound semiconductors, amorphous and nanocrystalline materials and oxides.
Volume is indexed by Thomson Reuters CPCI-S (WoS)