Books by Keyword: Diffusion

Description: Journal issue

Description: This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the "defects" considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants, imperfect surfaces, nanocrystals in host matrices, and bonding defects in glasses.
Important unifying similarities of the phenomena are identified and investigative methods are presented which can be applied, almost across-the-board, to materials which share a wide transparency, deep traps, extensive stored energy in electron-hole pairs, and a low conduction-electron density.

Description: These proceedings comprise the papers presented at the international conference on 'Diffusion in Materials (DIMAT-96)' held at Schloss Nordkirchen, Germany, August 1996 - the largest international diffusion conference so far held.
The two-volume set therefore covers a very broad spectrum of topics. From the materials point of view, metals, alloys, intermetallics, elemental and compound semiconductors, amorphous materials, nonmetals such as fast ionic conductors, oxides, nitrides, polymers and even melts were discussed.

Description: The increasing interest in the use of electrical techniques for the characterisation of material properties indicates the need for a book in which the most important issues in this area are addressed. Consequently, the aim of this volume is to provide a comprehensive description of the electrical techniques used in studies of the semiconducting properties of materials based upon ionic solids, principally metal oxides. A second aim is to present an updated review of the most important data on the defect-related properties of ionic solids, such as the transport of charge or matter, and their electrochemistry in an accessible form.

Description: The physics of ordered materials is much better understood than that of disordered materials. The lack of a long-range periodic structure makes it difficult to develop the theory of disordered phases. It is not surprising that it is often found difficult to interpret experimental data on these systems.

Description: The problem of the interrelationship between diffusion and stresses is as old as the investigation of diffusion itself. Crack formation during surface oxidation, stress-induced diffusion (creep, Gorsky-effect) and the macroscopic deformation of diffusion couples during interdiffusion are well-known classical examples.

Description: Journal issue

Description: Journal issue

Description: This publication focuses on the structural and chemical characterization of interfaces and their kinetic, mechanical and electrical properties. The size of the volume, consisting of almost 200 papers and over 900 pages, reflects the great current interest in the field.

Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.