Books by Keyword: Diffusion

Description: Although this volume is ostensibly devoted to diffusion per se, it also covers ionic conduction because this phenomenon, in the often complex and charge-sensitive structures of many ceramics, usually gives important clues as to the routes taken by all migrating species.

The definition of what constitutes a ceramic is also liberally interpreted here so as to include substances which are not normally used as such in the industrial sense. One obvious anomaly is the class of so-called room-temperature superconductors which, perversely, are expected to be used at the opposite end of the temperature scale to traditional ceramic applications. The coverage of research on oxides, carbides and nitrides herein is believed to be as complete as possible, while other possible candidates for inclusion are not necessarily to be found in the 'miscellaneous' section. Silicides, in particular, are notable by their absence.

Description: This work, like others in the series (Defects and Diffusion inSemiconductors and Defects and Diffusion in Ceramics), continues a 30-year program which has the aim of succinctly summarizing progress in the fields of diffusion and defect research.

Description: The phenomena of grain boundary diffusion and grain boundary segregation play major roles in determining the properties and behavior of a wide variety of materials. Even though the basic principles have been known for a long time, the field continues to yield a number of very challenging questions.

Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The present book provides a timely update to the current understanding of degradation processes in high-temperature materials, as related to chemical interactions with the environment.
The methods used to combat this degradation - particularly by means of protective coatings and surface treatments - are also analysed in detail.

Description: Many important properties of materials are governed by the microstructures which have evolved during their prior treatment. Therefore, the characterisation of structures and the understanding of structural changes has always been a central problem in any discipline which deals with materials.

Description: The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.

Description: This book presents the central ideas in the nanoscopic electron-affected stochastic dynamics of atomic diffusion in solids. Great care has been taken to develop the basic concepts, as well as to make the reader familiar with the application of the theory to various materials and experimental situations.

Description: Journal issue