Books by Keyword: Diffusion

Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The present book provides a timely update to the current understanding of degradation processes in high-temperature materials, as related to chemical interactions with the environment.
The methods used to combat this degradation - particularly by means of protective coatings and surface treatments - are also analysed in detail.

Description: Many important properties of materials are governed by the microstructures which have evolved during their prior treatment. Therefore, the characterisation of structures and the understanding of structural changes has always been a central problem in any discipline which deals with materials.

Description: The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.

Description: This book presents the central ideas in the nanoscopic electron-affected stochastic dynamics of atomic diffusion in solids. Great care has been taken to develop the basic concepts, as well as to make the reader familiar with the application of the theory to various materials and experimental situations.

Description: Journal issue

Description: Journal issue

Description: This book constitutes a comprehensive international forum on defect-related phenomena in wide-gap materials, crystalline or otherwise. Materials as diverse as SiO2, group-III nitride compounds, diamond, alkali halides, refractory oxides, and polymers are covered, and the "defects" considered include intrinsic point imperfections, dislocations, accidental impurities, intentional dopants, imperfect surfaces, nanocrystals in host matrices, and bonding defects in glasses.
Important unifying similarities of the phenomena are identified and investigative methods are presented which can be applied, almost across-the-board, to materials which share a wide transparency, deep traps, extensive stored energy in electron-hole pairs, and a low conduction-electron density.

Description: These proceedings comprise the papers presented at the international conference on 'Diffusion in Materials (DIMAT-96)' held at Schloss Nordkirchen, Germany, August 1996 - the largest international diffusion conference so far held.
The two-volume set therefore covers a very broad spectrum of topics. From the materials point of view, metals, alloys, intermetallics, elemental and compound semiconductors, amorphous materials, nonmetals such as fast ionic conductors, oxides, nitrides, polymers and even melts were discussed.