Books by Keyword: Diffusion

Description: Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Electroceramics are among the most interesting and useful materials for electronic devices, and various other high-technology applications. This book series presents the latest research results for the electroceramics in Japan.

Description: This book covers, on close to 2000 pages, all aspects of basic and applied diffusion research in all important engineering materials, including metals and intermetallics, elemental and compound semiconductors, amorphous and nanocrystalline materials and oxides.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This latest annual look back at the subject includes review papers on some applications of mechanical spectroscopy and magnetic relaxation to the monitoring of diffusion, on the effect of positron diffusion upon their annihilation, on the wind force in electromigration, on the creep of nanocrystalline metals (as related to grain-boundary diffusion) and on self-interstitial atom behaviour at high temperatures in dense metals.

Description: The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This books reports exciting new research results in the area of bulk metallic glasses and bulk nanocrystalline materials prepared by severe plastic deformation. Other major topics include synthesis and processing of metals, intermetallics and oxides, polymers, nanocomposites and others by different techniques, including mechanosynthesis and mechanochemistry. Also covered are the structural characterization of nanophase materials and the structural evolution caused by mechanical treatment.

Description: Halides continue to be an increasingly important industrial engineering resource: as electrolytes, and in heat-treatment baths on the one hand, and as the basis of exotic devices in the fields of optics, electronics, etc., on the other. At both of these extremes, the gross or detailed movements of ions, respectively, are important factors. There may also be an important geological need for a knowledge of halide diffusion data, in an era when the migration – or not - of various waste materials, including nuclear, through natural seams of halide-based minerals is of great concern.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book covers the principal topics of basic and applied research on diffusion-controlled transport phenomena in metals, ceramics and other systems. Particular attention is paid to diffusional mass transport, reactive diffusion, interdiffusion and phase transformations. Further attention is paid to the practical aspects of applying a deeper understanding of diffusion and reaction mechanisms to the development of materials with improved service properties.

The theory of interdiffusion, reactive diffusion and defect phenomena, the predictions of computer models, and other theoretical studies are extensively covered. Altogether, this again makes the present work an up-to-date and convenient source of information on current trends in the field of solid-state diffusion.

Description: This is the second issue, following DDF165-166, to cover recent progress in this field. As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies, although there is also extensive overage of more qualitative features of diffusion and defect phenomena, of the predictions of computer models, and of theoretical studies.

Description: With the continuing evolution of fabrication techniques and new structures for semiconducting materials, the list of new defect phenomena has also increased apace. The present book discusses point defects, defect-assisted diffusion, metal impurity additions, metastable defects, magnetic hyperfine interaction of deep donors in compound semiconductors, and oxygen and hydrogen impurity defects.