Books by Keyword: MOSFET

Description:

The 68th volume of the "Journal of Nano Research" compiled from the peer-reviewed manuscripts presenting the research results in the field of synthesis and properties analysis of various nanomaterials and nanostructures for industrial applications in microelectronics, mechatronics, and chemical production. This volume of the journal can be attractive and may be helpful for a wide range of engineers, scientists, and students whose activity is related to the synthesis and usage of nanomaterials and nanotechnologies in various fields of human activity.

Description: These papers were selected from materials of the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), July 17-20, 2019, Beijing, China. The collection introduces results of scientific and engineering researches in the area of growth, analysis of structure, and properties of wide bandgap semiconductors and of wide bandgap semiconductor devices.

Description: The 60th volume of the "Journal of Nano Research" presents to readers the collection of peer-reviewed papers by the results of the research from the field of synthesis, research properties and the use of various nanomaterials and nanostructures. We hope that this volume of the journal will be useful and interesting for a wide range of engineers, scientists, and students whose activity is related to the creation and using of nanomaterials and nanotechnologies in different branches of human activity.

Description: This volume contains selected papers from the 12^th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018. Researchers discussed the latest progress in the field of silicon carbide semiconductors, including their development and production, and their application in the power electronic devices. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices, including diodes, power MOSFETs, JFETs and IGBTs; reliability, circuits and applications. The contributors are academics and industrialists from around the world.

Description: The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-voltage switching, high-frequency high-power amplification and high-temperature operation. Work on the growth, characterization and device exploitation of epitaxial graphene was also covered. Evolving industrial products and capabilities were also highlighted.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon ultra-large scale integrated circuits (ULSIs) are now faced with various physical limits to further scaling. Therefore, it is very important to establish the fundamental science and technology required to produce nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS) having high performance, new functionalities and larger-scale integration. The scope of this book covers: - Nano-scale complementary metal-oxide-semiconductor devices (Nano-CMOS), - Novel functional devices, materials, and nanoprocessing technologies, - Nano-bio physics and technologies for future nano devices, - Variability control technologies and Signal integrity. This makes it a very useful handbook on the subject.

Description: The 13th International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM 2009) was held at the Congress Center, Nürnberg (CCN), Germany from October 11 to 16, 2009. This was a truly important and exciting event in the history of wide-bandgap semiconductors, as 503 scientists and engineers from 29 countries reported and discussed the progress made during the previous two years.