Books by Keyword: Photoluminescence (PL)

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The aim of this book is to provide the reader with the latest advanced research results on, and an improved understanding of, various aspects of the processing and characterization of materials.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection offers materials researchers and end-users a wealth of new knowledge encompassing the whole spectrum of ecology, eco-materials, nano-materials, bio-materials, recycling, environmental protection and materials related to energy conversion.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Japan is currently the most active country involved in carrying out research in. the rapidly expanding field of Electroceramics ; a field that has tremendous implications for a wide range of high-tech applications.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.

Description: This two-volume set contains the Proceedings of the 1st International Women's Conference on BIEN-Technology, held at Paichai University in Daejeon, Korea, on November 13th - 16th, 2003.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This conference provided female scientists with the opportunity to exchange their multidisciplinary expertise and research experience, to enhance interpersonal net-working, and to create a synergetic convergence of various emerging technologies such as Bio, Information, Environmental, Energy, Space and Nano technologies.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Research and development in the field of nanomaterials - thin films, nanowires, nanocrystals and nanostructured bulk materials - has increased very rapidly during recent years. Especially significant has been research in which the structure is closely controlled at the nanometer level in order to achieve the desired functional properties.
Important discoveries have been made, including quantum dots, confinement effects and super-emission, and the prospects for rapid development in these areas are very promising. The results of much of the basic research have been the basis of an astonishing rate of progress in microelectronics. It is therefore expected that the study and development of nanomaterials will provide a firm foundation for a major increase in the number of advanced technologies and for the development of new optoelectronics and photonic devices.

Description: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Description: Electroceramics are among the most interesting and useful materials for electronic devices and many other high-technology applications. This series of books regularly presents the latest research results, on electroceramics, coming out of Asia and Japan. This current volume integrates two themes, "Asian Ceramic Science for Electronics II" and "Electroceramics in Japan V", and describes many new and important results in ceramic science as applied to electronics, including: conductive ceramics; dielectrics, piezoelectric and ferroelectric ceramics; semiconducting ceramics; insulators; thin-film electroceramics; batteries and cells; memory devices and optical devices. Emphasis is placed very much on the potential applications of these materials, without neglecting the necessary production and fabrication techniques.

Description: Wide-bandgap semiconductors such as silicon carbide (SiC) and group-III Nitrides have attracted increasing attention as favored materials short-listed for use in new electronic devices; especially those destined for high-power, high-frequency and/or high-temperature applications, as well as short-wavelength light-emitters. This two-volume set contains >illustrated transcripts of papers presented at the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), held in the Fall of 2001 at Tsukuba, Japan. This timely conference was held in the very first year of the 21st century; an era in which SiC devices are going to find a real market. More than 500 contributors; both academic scientists and device engineers, from 20 countries, discussed and exchanged ideas extensively during the five days of the conference.

Description: This book on ultrafast phenomena in semiconductors covers the electrical, magnetic and optical properties of charge carriers in solids and the interaction of solids and low-dimensional structures with electromagnetic fields and radiation. The book gives particular attention to: (a) Spectroscopic, transport, noise and localization properties of electrons and holes confined in quantum wells and quantum dots, including microdevices, (b) Physical principles of generation and detection of Teraherz electromagnetic radiation, and (c) high-speed electronics and materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).