Books by Keyword: Photoluminescence (PL)

Description: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: The subject area of electronic devices has undergone a rapid expansion in recent years. New developments are continually accurring all over the world. Progress in the field of electronic devices is, however, dependent upon the production and characterization of device grade material. The science and technology of electronic materials has attracted somewhat less attention, as compared with device development.

Description: This volume presents the most recent results concerning the various approaches to obtaining light emission from silicon.

This dream of silicon technologists is inspired by the fact that an efficient and stable silicon light emitting device would open the way to the production of monolithic optoelectronic integrated circuits, that were based entirely upon silicon. In fact, some of the main building blocks of optoelectronic devices, such as waveguides and photodetectors have already been developed by using silicon technology. The above possibility would sharply reduce the price of optoelectronic circuits as compared with hybrid ones.

Description: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Description: The present volume covers many aspects of semiconductors, over the wide structural range from nano- to large-grained crystalline. Scientists working on polycrystalline semiconductors, with various chemistries, here review fundamental research, technology and applications.

Description: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Description: Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.

Description: Journal issue

Description: The main emphasis of this volume is on the fundamental physics of the II-VI compounds focusing on the properties of epitaxial layers, heterostructures, multilayers and superlattices.

Description: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.