Books by Keyword: Photoluminescence (PL)

Description: Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.

Description: This book comprises the contributions to the sixth conference on polycrystalline semiconductors (POLYSE).
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The conference covered many aspects of polycrystalline semiconductors, but was more applications-oriented than on previous occasions; thereby reflecting the rapid evolution of these technologies. POLYSE 2000 brought together research specialists from >basic research, as well as from research & development engineering, all of whom are working on devices such as thin-film transistors, micro-electromechanical systems, or sensors and actuators. In particular, ten internationally recognized scientists (J. Morante, S.Périchon, M. Konagai, S. Wagner, R. Hagenbeck, D.A. Bonnell, G. Horowitz, T.Fuyuki, J. Kocka and V. Chuwere) were invited to review their work on several interesting and promising aspects of the subject: such as, micro-systems, solar cells, thin-film transistors, organic polycrystalline devices and polycrystalline ceramics.

Description: Wide bandgap semiconductors such as SiC, III-V nitrides and related compounds are currently attracting more and more attention due to their very interesting physical properties, which are different from those of conventional semiconductors. Steady improvement of the crystal quality and improved knowledge of the physical properties of these materials are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue light emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This is the third special issue to cover recent progress in the field. As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies; although there is also extensive coverage of more qualitative features of diffusion and defect phenomena, of the predictions of computer models, and of theoretical studies. As before, the usual definition of ‘ceramic’ has been widened so as to include all forms of carbon, and also some nitrides whose primary use is not that of a classical ceramic.

Description: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.

Description: Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.

Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.

Description: Like the previous conferences in this series, POLYSE '98 covered many aspects of polycrystalline semiconductors. Whereas earlier proceedings had included many contributions on basic research, for example on the structural properties of single grain boundaries, later proceedings had included more articles on solar cells and thin-film transistors, seemingly marking a transition to a more technology-oriented conference. However, the contributions to POLYSE '98 show that the POLYSE-series is again bringing together researchers from basic research as well as engineers working on devices.

The 84 papers cover topics such as: beam-induced currents, thin-film silicon, silicon crystallization, oxide semiconductor films, chalcogenide and spinel films, chalcopyrite films, thin-film junctions and devices; thus providing an extensive survey of the most recent results in polycrystalline semiconductor research.

Description: The 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98) focussed on many theoretical and experimental aspects of this topic. The aim was to bring together specialists working in the fields of both fundamental research and applications. There were more than 80 participants from 15 countries all over the world.

Description: The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.