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Books by Keyword: Photoluminescence (PL)
Books
Edited by:
M. Kittler and H. Richter
Online since: October 2009
Description: This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.
Edited by:
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Online since: March 2009
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters.
Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides, are attracting increased attention as promising materials for high-power, high-frequency and high-temperature electronics use, as well as for short-wavelength light-emitters.
Edited by:
Akira Suzuki, Hajime Okumura, Prof. Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Dr. Shin-ichi Nishizawa
Online since: September 2008
Description: Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Edited by:
Dr. Pietro Vincenzini and Giancarlo Righini
Online since: September 2008
Description: This work consists of 33 peer-reviewed papers. Altogether, they offer a gamut of timely information on “Smart Optics”. The papers are conveniently arranged under the headings: chapter 1 - Smart optical materials; chapter 2 - Passive, active and adaptive optical devices & systems; chapter 3 - Ongoing applications and perspectives. This special volume has also been published online in the series, “Advances in Science and Technology” Vol. 55.
Edited by:
S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG
Online since: November 2007
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book consists of a collection of 74 original peer-reviewed papers. They cover a wide range of topics in the interesting field of nano-structure related semiconductor photonics; a field which encompasses quantum dots, quantum wire, nano-wire, nano-rods, nano-crystals, photonic crystals, ZnO-based materials, III-V compound semiconductors, Si photonics and organic optoelectronic devices.
This book consists of a collection of 74 original peer-reviewed papers. They cover a wide range of topics in the interesting field of nano-structure related semiconductor photonics; a field which encompasses quantum dots, quantum wire, nano-wire, nano-rods, nano-crystals, photonic crystals, ZnO-based materials, III-V compound semiconductors, Si photonics and organic optoelectronic devices.
Edited by:
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Online since: October 2007
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Edited by:
Witold Łojkowski and John R. Blizzard, Urszula Narkiewicz and Janusz D. Fidelus
Online since: October 2007
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The production of nanopowders, and their applications in industrial and technological innovation, is an important and growing area of interest in the world of nanotechnology. It is widely recognized that the basic properties of nanopowders are strongly influenced by their shape, size, distribution and surface chemistry.
The production of nanopowders, and their applications in industrial and technological innovation, is an important and growing area of interest in the world of nanotechnology. It is widely recognized that the basic properties of nanopowders are strongly influenced by their shape, size, distribution and surface chemistry.
Edited by:
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
Online since: September 2007
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.
Edited by:
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
Online since: June 2007
Description: This extensive collection of papers presents new results focussing on advanced nanomaterials and their processing.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Over 460 papers have been selected, for this special issue, covering three main fields: Electronic Materials Processing and Fabrication, Development of Functional Materials, and Nano and Structural Materials., These are the essential foundations of the NanoMaterials currently undergoing research and development.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Over 460 papers have been selected, for this special issue, covering three main fields: Electronic Materials Processing and Fabrication, Development of Functional Materials, and Nano and Structural Materials., These are the essential foundations of the NanoMaterials currently undergoing research and development.
Edited by:
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Online since: October 2006
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.