Engineering Research
Materials Science
Engineering Series
Books by Keyword: Thin Film
Books
This issue is based on proceedings of the 3rd International Conference on Physics and Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988. The collected articles present research results in studies of crystal properties and preparation methods of gallium arsenide and the use of gallium arsenide as a semiconductor compound with high electron mobility.
This monograph is devoted to the analysis and investigation of the electrodiffusion phenomenon. The application of an electric field to a metal, alloy, or other material may result in the transport of matter as well as the flow of electrons. This phenomenon, variously described as electrotransport, electromigration, or electrodiffusion, is most commonly manifested in the separation of the components of an alloy which results from their different induced rates or directions of migration. An applied field may similarly produce In pure elements a directed displacement of vacancies or interstitials (self-transport) or different isotopes (the Haeffner effect).