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XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution

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Abstract:

We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution with Accelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibited homogeneous green color without cracks and inclusions. The crystallinity of the self-standing crystal was characterized by various precise XRD diffraction measurements, such as の-scan rocking curve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at Half Maximum (FWHM) of the の-scan rocking curves was about 20 arcsec. The X-ray topography showed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited a sharp single peak indicating the excellent crystallinity. Finally we confirmed rather high crystallinity of the self-standing crystals by etch pits measurement using molten KOH etching.

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Silicon Carbide and Related Materials 2006 View Preview

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

303-306

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.303

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Online since:

September 2007

Authors:

Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Akihiro Yauchi

Keywords:

6H-SiC, Reciprocal-Lattice Map, Rocking Curve, Solution Growth, X-Ray Topography

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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