Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth

Naoyoshi Komatsu; Takeshi Mitani; Yuichiro Hayashi; Hiromasa Suo; Tomohisa Kato; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.963.71

Paper Titles

A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials
p.51

Research on the Key Problems in the Industrialization of SiC Substrate Materials
p.56

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
p.60

Study on Dislocation Behaviors during PVT Growth of 4H-SiC
p.64

Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
p.71

Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth
p.75

Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method
p.80

Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent
p.85

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process
p.91

HomeMaterials Science ForumMaterials Science Forum Vol. 963Application of Defect Conversion Layer by Solution...

Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth

Abstract:

We have developed the bulk growth technique to reduce threading screw dislocations (TSDs) by combining solution growth and PVT growth methods. More than 80 % of TSDs in original seed crystals were successfully converted to Frank defects on basal planes by the solution growth on 4° off C-face with Si-5at.% Ti solvent. After PVT growth on the as-grown surface of the conversion layer, TSDs in the original seed were successfully reduced. The presence of micrometer-size macrosteps in the initial stage of PVT growth is important to continue to propagate the converted Frank defects on basal planes during PVT bulk growth.