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Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling
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Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas
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High Performance, Eco-Friendly SPM Cleaning Technology Using Integrated Bench-Single Wafer Cleaning System
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Effect of Hydrophobicity and Surface Potential of Silicon on SiO2 Etching in Nanometer-Sized Narrow Spaces
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High Performance, Eco-Friendly SPM Cleaning Technology Using Integrated Bench-Single Wafer Cleaning System

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Abstract:

Batch SPM systems do not meet the current clean specification/requirements below 28nm. Single wafer SPM systems use a high volume of chemistry which runs to drain, while meeting the cleaning specifications below 28nm. The work in this paper describe the use of a batch SPM system and a single wafer clean in an integrated system, Ultra-C Tahoe which results in meeting the technical specification and using less that 80% of the SPM chemistry used in single wafer systems. The data collected shows this new system meet the specifications, whilst saving more than 80%of SPM chemistry.

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Info:

Periodical:

Solid State Phenomena (Volume 314)

Pages:

133-139

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.133

Citation:

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Online since:

February 2021

Authors:

Fu Ping Chen, Hai Bo Lei, Xiao Yan Zhang, Wen Jun Wang, She Na Jia, Jane Wang, Jason Lee, Y.Y. Kim, Bruce Lee, Sally Ann Henry*, David H. Wang, Zhang Yu Yu, Tao Zhang, Jun Huang, Fang Li, Chung Wei Wang, Hong Li, Yi Yang

Keywords:

Chemical Saving, Eco-Friendly, Environment, Photoresist Strip, Polymer Removal, Post CMP Clean, Post-Etch Clean, Post-Implant Clean, SPM Cleaning, Sulfuric Acid (H2SO4)

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© 2021 Trans Tech Publications Ltd. All Rights Reserved

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