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SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

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Abstract:

4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is necessary compared with the silane/ethylene system. This ratio has to be reduced especially at higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS (trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine, that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness and the crystal quality are very promising.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

179-182

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.179

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Online since:

October 2006

Authors:

Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, F. Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa, Milo Barbera, Ricardo Reitano, Gaetano Foti, Francesco La Via

Keywords:

High Growth Rate, Homoepitaxial Growth, Trichlorosilane (TCS)

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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