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Plasma Properties, Deposition and Etching

Materials Science Forum Volumes 140 - 142

• Papers
• Abstracts

• p1 PECVD of Silicon Dioxide from TEOS/Oxygen Mixtures   [ 957 K ]
  Authors: T.S. Cale, G.B. Raupp
• p17 Analysis and Design of Plasma Chemical Reactions Based on Quantum Chemical Methods   [ 239 K ]
  Authors: K. Sato
• p25 Advanced Simulation of Dry Etching Process Technology   [ 685 K ]
  Authors: J. Pelka
• p39 Anisotropic ECR Plasma Etching with Low-Energy Ions   [ 708 K ]
  Authors: Y. Tobinaga, T. Miyano, K. Fujimoto, M. Fujito, H. Fujiwara
• p55 High-Rate Sputtering with Electron Cyclotron Resonance and Electric-Mirror Excitation   [ 1 M ]
  Authors: Masaya Matsuoka
• p79 Modified ECR Plasma Deposition   [ 403 K ]
  Authors: S. Nakamura, Toshikazu Akahori, Satoshi Nakayama
• p89 DC Saddle-Field Plasma-Enhanced Vapour Deposition   [ 1 M ]
  Authors: R.V. Kruzelecky, S. Zukotynski
• p107 Theoretical Characterization of Electron Energy Distribution Function in RF Plasmas   [ 474 K ]
  Authors: M. Capitelli, G. Capriati, M. Dilonardo, C. Gorse, S. Longo
• p121 Ion Energy Distributions and Sidewall Profiles in Reactive Ion Etching   [ 481 K ]
  Authors: P.W. May, David P. Field, D.F. Klemperer, Y.P. Song
• p133 Dissipative Structures and Nonequilibrium Phenomena in Plasma-Surface Interaction   [ 936 K ]
  Authors: Y.L. Khait