Paper Titles
Direct Synthesis and Growth of SiC Single Crystal from Ultrafine Particle Precursor
p.159
Recent Achievements and Future Challenges in SiC Homoepitaxial Growth
p.165
Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers
p.171
Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD
p.175
High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
p.179
Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
p.183
Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation
p.187
Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
p.191
Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
p.195

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

179-182

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.179

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Cite this paper

Online since:

April 2002

Authors:

Koh Masahara, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Johji Nishio, Kazutoshi Kojima, Yuuki Ishida, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

Keywords:

Growth Rate, Hot-Wall CVD, Hydrogen Etching

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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