Paper Titles
Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor
p.211
Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
p.215
Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
p.219
Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition
p.223
Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
p.227
Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
p.231
The Effect of Epitaxial Growth on Warp of SiC Wafers
p.235
In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth
p.239
Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD
p.243

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

227-230

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.227

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Cite this paper

Online since:

April 2002

Authors:

Mitsuru Hasegawa, Akihiro Miyauchi, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Toshiyuki Ohno, Johji Nishio, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

Keywords:

Growth Rate, Hot-Wall CVD, Hydrogen Etching, Simulation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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