Paper Titles
On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
p.17
Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
p.21
Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation
p.25
Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation
p.29
HTCVD Grown Semi-Insulating SiC Substrates
p.33
Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
p.39
Defects in Semi-Insulating SiC Substrates
p.45
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
p.51
PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
p.55

HTCVD Grown Semi-Insulating SiC Substrates

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

33-38

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.33

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Online since:

September 2003

Authors:

Alexsandre Ellison, Björn Magnusson, Nguyen Tien Son, L. Storasta, Erik Janzén

Keywords:

HTCVD Growth, Intrinsic Defect, Micropipe Closing, Purity, Semi-Insulating Substrate

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] E. Morvan, O. Noblanc, C. Dua and C. Brylinski: Mater. Sci. Forum Vol. 353-356 (2001), p.669.

DOI: 10.4028/www.scientific.net/msf.353-356.669

Google Scholar

[2] W. C. Mitchel, A. Saxler, R. Perrin, J. Goldstein, S.R. Smith, A.O. Evwaraye, J.S. Solomon, M. Brady, V. Tsvetkov and C.H. Carter Jr.: Mater. Sci. Forum Vol. 338-342 (2001) p.21.

DOI: 10.4028/www.scientific.net/msf.338-342.21

Google Scholar

[3] A. Ellison, J. Zhang, W. Magnusson, A. Henry, Q. Wahab, J.P. Bergman, C. Hemmingsson, N.T. Son and E. Janzén: Mater. Sci. Forum Vol. 338-342 (2000), p.131.

DOI: 10.4028/www.scientific.net/msf.338-342.131

Google Scholar

[4] A. Ellison, B. Magnusson, C. Hemmingsson, W. Magnusson, T. Iakimov, L. Storasta, A. Henry, N. Henelius and E. Janzén: Mat. Res. Symp. Proc. Vol. 640 (2001), p. H1. 2. 1.

DOI: 10.1557/proc-640-h1.2

Google Scholar

[5] N. Sghaier, J.M. Bluet, A. Souifi, G. Guillot, E. Morvan and C. Brylinski: Mater. Sci. Forum Vol. 389-393 (2002), p.1363.

DOI: 10.4028/www.scientific.net/msf.389-393.1363

Google Scholar

[6] St. G. Müller, M. F. Brady, W. H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, J.R. Jenny, R. Leonard, D. Malta, A. Powell, V.F. Tsvetkov, S. Allen, J. Palmour and C.H. Carter, Jr.: Mater. Sci. Forum Vol. 389-393 (2002), p.23.

DOI: 10.4028/www.scientific.net/msf.389-393.23

Google Scholar

[7] PhD thesis, Diss. No. 510, A. Ellison, Linköping University, Sweden (1999), p.155.

Google Scholar

[8] B. Sundqvist et al., E. Janzén, these proceedings.

Google Scholar

[9] L. Torpo, M. Marlo, T.E.M. Staab and R. M. Nieminen: J. Phys. Condens. Matter 13 (2001) p.6203.

Google Scholar

[10] Mt. Wagner, B. Magnusson, W. M. Chen and E. Janzén: Phys. Rev. B 62-4 (2000) p.16555.

Google Scholar

[11] N. T. Son et al., these proceedings.

Google Scholar

[12] K. Horio, A. Wakabayashi and T. Yamada: IEEE Trans. Electron. Dev. 47 (2000) p.617.

Google Scholar

[13] A. Kawasuso, H. Itoh, S. Okada and H. Okumura: J. Appl. Phys. 80 (1996) p.5639.

Google Scholar

[14] M. Gustavsson, E. Karawacki and S.E. Gustafsson: Rev. Sci. Instrum. Vol. 65 (2000) p.3856.

Google Scholar

[15] D. Hobgood, M. Brady, W. Brixius, G. Fechko, R. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, St. G. Müller, V. Tsvetkov and C. Carter, Jr.: Mater. Sci. Forum Vol. 338-342 (2000), p.3.

DOI: 10.4028/www.scientific.net/msf.338-342.3

Google Scholar