Paper Titles
Electron-Induced Damage Effects in 4H-SiC Schottky Diodes
p.439
Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation
p.443
Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC
p.447
Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films
p.451
Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes
p.455
Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
p.459
Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
p.463
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
p.467
Identification and Annealing of Common Intrinsic Defect Centers
p.471

Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

455-458

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.455

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Online since:

September 2003

Authors:

Luciano Scaltrito, Samuele Porro, Fabrizio Giorgis, P. Mandracci, M. Cocuzza, C. Fabrizio Pirri, Carlo Ricciardi, Sergio Ferrero, G. Richieri, C. Sgorlon, Luigi Merlin, Anna Cavallini, Antonio Castaldini

Keywords:

Defect, Electrical Characterization, Morphological Characterization, Schottky Diode, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

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