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Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data
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Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN
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Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC
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Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
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The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes
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Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC
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Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

677-680

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.677

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Online since:

September 2003

Authors:

Nobuhisa Tanuma, Hirokazu Tanizaki, Saburo Yokokura, T. Matsui, Sumihisa Hashiguchi, Josef Sikula, Munecazu Tacano

Keywords:

Gallium Nitride (GaN), Low-Frequency Noise, Ohmic Contact

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

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