Paper Titles
4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
p.89
2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
p.93
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
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Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor
p.101
Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth
p.105
Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC
p.109
CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
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Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
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Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
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Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth

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Abstract:

Mechanisms and consequences of silicon vapor condensation during SiC epitaxial growth or implant annealing with silane overpressure were investigated. The model for the silicon liquid droplets formation in the gas phase and their deposition on the surface of the SiC substrate was developed. The droplet formation dependence on the silane flow rate, temperature profile in the reactor, and the local temperature variations introduced by the wafer carrier and SiC substrate were investigated.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

105-108

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.105

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Online since:

May 2005

Authors:

Galyna Melnychuck, Yaroslav Koshka, Michael S. Mazzola, Jeffery L. Wyatt

Keywords:

Chemical Vapor Deposition (CVD), Droplets, Epitaxial Growth, Hot-Wall CVD, Implant Annealing, Simulation

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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