Paper Titles
Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
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Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
p.381
Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide
p.385
Study of Ion Induced Damage in 4H-SiC
p.389
Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers
p.393
Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy
p.397
Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC
p.401
Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
p.405
Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals
p.409

Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers

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Abstract:

We have studied the application of optical techniques for the determination of the spatial distribution of electronic properties of highly aluminum doped p-type SiC wafers. Absorption and birefringence mapping are known to be sensitive characterization methods to determine the homogeneity of charge carrier concentration and defects in n-type SiC. In the case of highly p-type doped SiC these methods fail due to the opaque character of the material. In this paper we show that Raman spectroscopy which is a reflective method can be used in order to address the same materials properties like absorption and birefringence. The study was performed using medium doped p-type SiC:Al where optical transmission and reflection methods can be applied simultaneously.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

393-396

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.393

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Online since:

May 2005

Authors:

Peter J. Wellmann, Ralf Müller, Michel Pons, Aurelie Thuaire, Alexandre Crisci, Michel Mermoux, Laurent Auvray

Keywords:

Absorption Mapping, Birefringence, p-Type Doping, Raman Mapping

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

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