Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor

Alessandro Veneroni; Fabrizio Omarini; Maurizio Masi; Stefano Leone; Marco Mauceri; Giuseppe Pistone; Giuseppe Abbondanza

doi:10.4028/www.scientific.net/MSF.483-485.57

Paper Titles

Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
p.39

Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals
p.43

SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
p.47

Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor
p.53

Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
p.57

SiC and III-Nitride Growth in Hot-Wall CVD Reactor
p.61

New Achievements on CVD Based Methods for SiC Epitaxial Growth
p.67

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
p.73

High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
p.77

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Epitaxial Deposition of Silicon Carbide Films in a...

Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor

Abstract:

The present production processes for epitaxial SiC do not allow the matching of productivity with the material quality requested by the microelectronics market. Here, to respond to such a demand, a combined experimental and multi-scale – multi-hierarchy modeling approach was adopted. Models allow to verify a priori the role of process operative parameters on the performance ones for both the final product and of the process itself, like growth rate uniformity, film stoichiometry and dopants incorporation, homogeneous nucleation of particulate, microdefects and film morphology. Specifically, in this work the developing of a lumped deposition mechanism is addressed