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Polycrystalline Semiconductors III

Solid State Phenomena Volumes 37 - 38

• Papers
• Abstracts

• p3 The Electrical Activity of Dislocations in Edge-Defined Film-Fed Growth Silicon   [ 546 K ]
  Authors: W.D. Sawyer, R.O. Bell, A. Schönecker
• p13 Correlation of Structural and Electronic Properties from Dislocations in Semiconductors   [ 628 K ]
  Authors: Joerg Weber
• p25 How Can Dislocations Enhance the Efficiency of Photovoltaic Solar Cells?   [ 256 K ]
  Authors: H.F. Mataré
• p31 About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cells   [ 162 K ]
  Authors: H. El Ghitani, Marcel Pasquinelli, J.J. Simon, Santo Martinuzzi
• p35 g-Tensors of Electrons Bound to 60°-Dislocations in Ge and Si   [ 256 K ]
  Authors: Y.T. Rebane, Y.G. Shreter
• p41 Formation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate Orientation   [ 340 K ]
  Authors: M. Albrecht, S. Christiansen, P.O. Hansson, Horst P. Strunk, E. Bauser
• p47 In Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron Microscope   [ 465 K ]
  Authors: M. Werner, Martin Bartsch, U. Messerschmidt, D. Baither
• p55 Theoretical Study of the Atomic and Electronic Structures of Grain Boundaries in Semiconductors   [ 716 K ]
  Authors: Masanori Kohyama, R. Yamamoto
• p67 Structure of Grain Boundaries in Polycrystalline Semiconductors   [ 593 K ]
  Authors: S. McKernan, C.B. Carter
• p75 High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions   [ 506 K ]
  Authors: O.B.M. Hardouin Duparc