Organic Contamination Control in Silicon Surface Processing

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Solid State Phenomena (Volumes 103-104)

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49-54

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April 2005

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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[1] S. R. Kasi, M. Liehr, P. Thiry, H. Dallaporta, M. Offenberg: Appl. Phys. Lett. 59, 108 (1991).

DOI: 10.1063/1.105560

Google Scholar

[2] K. Saga and T. Hattori: Appl. Phys. Lett, 71, 3670 (1997).

Google Scholar

[3] T. Hattori, in Characterization and Metrology for ULSI Technology/2000, D. G. Seiler, A. C. Diebold, T. J. Shaffner, R. McDonald, W. M. Bullis, P. J. Smith, and E. M. Secula, Editors, pp.275-284, AIP Conference Proceedings, 550, New York (2001).

Google Scholar

[4] T. Hattori (ed.), Ultra Clean Surface Processing of Silicon Wafers, Springer, Berlin (1998).

Google Scholar

[5] N. Munter, B.O. Kolbesen, W. Storm and T. Muller, in Ultra Clean Processing of Silicon Surfaces 2000, Scitec Publications, Switzerland, pp.115-118 (2000).

Google Scholar

[6] W. Kern and D. A. Puotinen: RCA Review, 31, 187 (1970).

Google Scholar

[7] R. R. Kunz, V. Liberman, D. K. Downs, in Optical Microlithography XIII, Christopher J. Progler, Editor, Proceedings of SPIE, 4000, pp.474-487 (2000).

Google Scholar

[8] M. Tamaoki, K. Nishiki, A. Shimazaki, Y. Sasaki, S. Yanagi: in Proceedings of IEEE/SEMI Advanced Semiconductor Manufacturing Conference 1995, Boston, pp.322-326 (1995).

DOI: 10.1109/asmc.1995.484397

Google Scholar

[9] K. Saga and T. Hattori: J. Electrochem. Soc., 144, L253 (1997).

Google Scholar

[10] M. K. Sanganeria, M. C. Ozturk, and K. E. Violette, Appl. Phys. Lett, 66, 1255 (1995).

Google Scholar

[11] K. Saga and T. Hattori: in Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, PV 2003-03, p.136, The Electrochemical Society Proceedings Series, Pennington, NJ (2003).

Google Scholar

[12] K. Saga and T. Hattori: J. Electrochem. Soc., 143, 3279 (1996).

Google Scholar

[13] K. J. Budde, W. J. Holzapfel, and M. M. Beyer: J Electrochem., Soc., 142, 888 (1995).

Google Scholar

[14] K. Saga : Unpublished data. Available from Sony manufacturing science co., Kuki, Japan.

Google Scholar

[15] T. Hattori, T. Osaka, A. Okamoto, K. Saga, and H. Kuniyasu: J. Electrochem. Soc., 145, 3278 (1998).

Google Scholar

[16] K. Saga and T. Hattori: Electrochem. Solid-State Lett. 2, 300 (1999).

Google Scholar

[17] K. Saga and T. Hattori: J. Electrochem. Soc., 144, L250 (1997). Nitrogen Single-Wafer Spin Cleaning system Container or Pod Wafer Transfer Chamber Gate Valve Wafer Stage Cleaning Chamber Fig. 11 Schematic illustration of a mini-environment system with an organic-outgassing free closed pod. Retention Time (min.) Abundance BHT DBP 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 10 Fig. 10 Gas chromatograms of organic contaminants adsorbing on the surface of silicon wafers before/after storing in plastic boxes. (a) Just after cleaning with diluted HF (b) Stored in a plastic box purged with oxygen (c) Stored in a plastic box purged with nitrogen after cleaning after cleaning

DOI: 10.1007/978-3-662-03535-1_37

Google Scholar