Paper Titles
Estimation of Detrimental Impact of New Metal Candidates in Advanced Microelectronics
p.247
Plastic Containers Contamination by Volatile Acids : Accumulation, Release and Transfer to Cu-Surfaces during Wafers Storage
p.251
A Study on Germanium as a Contaminant Source in Semiconductor Fabrication Process
p.255
Implementation of a System for Metal Contamination Control Based on Classification Criteria
p.259
Study of Static Electricity in Wafer Cleaning Process
p.263
Mapping of Metallic Contamination Using TXRF
p.269
Investigation of Metallic Contamination Analysis Using Vapor Phase Decomposition – Droplet Collection – Total Reflection X-Ray Fluorescence (VPD-DC-TXRF) for Pt-Group Elements on Silicon Wafers
p.273
X-Ray Spectrometry for Wafer Contamination Analysis and Speciation as Well as for Reference-Free Nanolayer Characterization
p.277
Advanced Metrologies for Cleans Characterization: ARXPS, GIXF and NEXAFS
p.281

Study of Static Electricity in Wafer Cleaning Process

Article Preview

Abstract:

You might also be interested in these eBooks
Ultra Clean Processing of Semiconductor Surfaces VIII View Preview

Info:

Periodical:

Solid State Phenomena (Volume 134)

Pages:

263-266

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.263

Citation:

Cite this paper

Online since:

November 2007

Authors:

Masayuki Wada, T. Sueto, H. Takahashi, N. Hayashi, Atsuro Eitoku

Keywords:

Plastic Material, Silicon Wafer, Static Electricity, Wafer Cleaning

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2008 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] Larry B. Lerit, Tom M. Haniey, Frank. Curran: Solid State Technology, June 2000 edition.

Google Scholar

[2] A. Steinman: The basics of air ionization for high-technology manufacturing applications, Compliance engineering, 2006 Annual reference guide.

Google Scholar

[3] T. Ohmi, S. Sudoh and H. Mishima: IEEE Transactions on semiconductor manufacturing. VOL. 7, No. 4, November 1994 Figure 3: Voltage variations on wafer surface after chemical dispensing. (I) dHCl dispensed from charged PTFE beaker. (II) dHCl dispensed from neutral PTFE beaker.

Google Scholar