[1]
Benny, E.T.P. and Majhi, J., 1992. 58(4): pp.261-270.
Google Scholar
[2]
Gray, D.C., et al., 1995. 142(11): pp.3859-3863.
Google Scholar
[3]
Butterbaugh, J., 1998(June 1998): p.173.
Google Scholar
[4]
Hattori, T., et al., 1998. 145(9): pp.3278-3284.
Google Scholar
[5]
Kern, W., Handbook of semiconductor wafer cleaning technology: science, technology, and applications. Materials science and process technology series. Electronic materials and process technology. 1993, Park Ridge, N.J., U.S.A.: Noyes Publications. 623 p.
DOI: 10.1016/b978-0-8155-1554-8/50019-7
Google Scholar
[6]
Ma, Y., et al., 1995. 13(4): pp.1460-1465.
Google Scholar
[7]
Miki, N., et al., 1990. 37(1): pp.107-115.
Google Scholar
[8]
van der Heide, P.A.M., Hofman, M.J.B., and Ronde, H.J., 1989. 7(3): pp.1719-1723.
Google Scholar
[9]
Chang, S.L.L., Hanestad, R., and Butterbaugh, J.W., 1998. 41(5): p.71.
Google Scholar
[10]
Helms, C.R. and Deal, B.E., 1992. 10(4): pp.806-811.
Google Scholar
[11]
Muscat, A.J., et al. Characterization of Silicon Dioxide Etching in Gas Phase HF/Vapor Mixtures. in 4th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. 1995. Chicago, IL: Electrochemical Society Proceedings.
Google Scholar
[12]
Kang, J.K. and Musgrave, C.B., 2002. 116(1): pp.275-280.
Google Scholar
[13]
Finstad, C.C., et al., (2003).
Google Scholar
[14]
Tarakanova, E.G., Huisken, F., and Kaloudis, M., 1997: pp.180-182.
Google Scholar
[15]
Zhou, J. and Wolden, C.A., 2000. 147(11): pp.4142-4147.
Google Scholar
[16]
Watanabe, S., 1995. 341(3): pp.304-310.
Google Scholar