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Silicon Carbide and Related Materials - 2002

Materials Science Forum Volumes 433 - 436

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• p59 Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC   [ 410 K ]
  Authors: Yu.M. Suleimanov, S. Lulu, I. Tarasov, Sergei S. Ostapenko, V.D. Heydemann, Matthew D. Roth, Olof Kordina, Mike F. MacMillan, Stephen E. Saddow
• p63 Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method   [ 222 K ]
  Authors: Kurt Semmelroth, Frank Schmid, D. Karg, Gerhard Pensl, Manfred Maier, Siegmund Greulich-Weber, Johann Martin Spaeth
• p67 Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient   [ 578 K ]
  Authors: Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Pierre M. Masri, Albrecht Winnacker
• p71 Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC   [ 97 K ]
  Authors: H. Tanaka, Taro Nishiguchi, Makato Sasaki, Satoru Ohshima, Shigehiro Nishino
• p75 Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation   [ 93 K ]
  Authors: R.R Ciechonski, Rositza Yakimova, Mikael Syväjärvi, Erik Janzén
• p79 Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor   [ 237 K ]
  Authors: Yoshimitsu Yamada, Kazukiyo Sagawa, Shinichi Nakashima
• p83 Defect Reduction in SiC Crystals Grown by the Modified Lely Method   [ 536 K ]
  Authors: Mikhail Anikin, Michel Pons, Etienne Pernot, Roland Madar
• p87 A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process   [ 153 K ]
  Authors: Ludovic Charpentier, Francis Baillet, Didier Chaussende, Etienne Pernot, Michel Pons, Roland Madar
• p91 Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport   [ 259 K ]
  Authors: H. J. Rost, K. Irmscher, J. Doerschel, D. Siche, D. Schulz, Jürgen Wollweber
• p95 Morphological Features of Sublimation-Grown 4H-SiC Layers   [ 580 K ]
  Authors: D. Schulz, J. Doerschel
• p99 Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth   [ 92 K ]
  Authors: Roman Drachev, Dimitri I. Cherednichenko, I.I. Khlebnikov, Yuri I. Khlebnikov, Tangali S. Sudarshan
• p103 Heat Transfer Modeling of a New Crystal Growth Process   [ 84 K ]
  Authors: Francis Baillet, Didier Chaussende, Ludovic Charpentier, Etienne Pernot, Michel Pons, Roland Madar
• p107 Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution   [ 63 K ]
  Authors: Oleg A. Agueev, Alexander M. Svetlichnyi, A.G. Klovo, A.N. Kocherov, D.A. Izotovs
• p111 Crystal Interface Shape Simulation during SiC Sublimation Growth   [ 247 K ]
  Authors: K. Böttcher, D. Schulz
• p115 Growth at High Rates and Characterization of Bulk 3C-SiC Material   [ 266 K ]
  Authors: Gabriel Ferro, Carole Balloud, Sandrine Juillaguet, Patrice Vicente, Jean Camassel, Yves Monteil