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Silicon Carbide and Related Materials 2004

Materials Science Forum Volumes 483 - 485

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• p61 SiC and III-Nitride Growth in Hot-Wall CVD Reactor   [ 3 M ]
  Authors: Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad ul Hassan, Anne Henry, Ivan G. Ivanov, A. Kakanakova-Georgieva, P.O.Å. Persson, Qamar-ul Wahab
• p67 New Achievements on CVD Based Methods for SiC Epitaxial Growth   [ 604 K ]
  Authors: Danilo Crippa, Gian Luca Valente, Alfonso Ruggiero, L. Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, G. Abbagnale, Alessandro Veneroni, Fabrizio Omarini, L. Zamolo, Maurizio Masi, Fabrizio Roccaforte, G. Giannazzo, Salvatore Di Franco, Francesco La Via
• p73 Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive   [ 1 M ]
  Authors: Rachael L. Myers-Ward, Olof Kordina, Z. Shishkin, Shailaja P. Rao, R. Everly, Stephen E. Saddow
• p77 High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor   [ 235 K ]
  Authors: Jie Zhang, Janice Mazzola, Carl Hoff, Yaroslav Koshka, Jeff B. Casady
• p81 Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor   [ 264 K ]
  Authors: Yaroslav Koshka, Huang De Lin, Galyna Melnychuck, Michael S. Mazzola, Jeffery L. Wyatt
• p85 Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD   [ 260 K ]
  Authors: Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami
• p89 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles   [ 2 M ]
  Authors: Hiroaki Saitoh, Tsunenobu Kimoto
• p93 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method   [ 3 M ]
  Authors: Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga
• p97 Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates   [ 1 M ]
  Authors: Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Kunikaza Izumi, Koji Nakayama, R. Ishii, Katsunori Asano, Yoshitaka Sugawara
• p101 Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor   [ 468 K ]
  Authors: Anne Henry, Erik Janzén
• p105 Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth   [ 201 K ]
  Authors: Galyna Melnychuck, Yaroslav Koshka, Michael S. Mazzola, Jeffery L. Wyatt
• p109 Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC   [ 813 K ]
  Authors: Günter Wagner, D. Schulz, J. Doerschel
• p113 CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates   [ 1 M ]
  Authors: Ze Hong Zhang, Ying Gao, Arul Arjunan, Eugene Toupitsyn, Priyamvada Sadagopan, Robert M. Kennedy, Tangali S. Sudarshan
• p117 Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates   [ 189 K ]
  Authors: Caroline Blanc, Marcin Zielinski, Veronique Soulière, C. Sartel, Sandrine Juillaguet, Sylvie Contreras, Jean Camassel, Yves Monteil
• p121 Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane   [ 201 K ]
  Authors: C. Sartel, Veronique Soulière, Marcin Zielinski, Yves Monteil, Jean Camassel, S. Rushworth