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Gettering anf Defect Engineering in Semiconductor Technology IX

Solid State Phenomena Volumes 82 - 84

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• p765 Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model   [ 279 K ]
  Authors: P. Petrik, O. Polgár, T. Lohner, M. Fried, N.Q. Khánh, J. Gyulai
• p771 Evaluation of Effective Carrier Lifetime in Epitaxial Silicon Layers   [ 276 K ]
  Authors: Hele Väinölä, J. Storgårds, Marko Yli-Koski, Juha Sinkkonen
• p777 Spatial Distribution of Strain and Phases in Si Nano-Indentation Analysed by Raman Mapping   [ 300 K ]
  Authors: F. Demangeot, P. Puech, V. Paillard, V. Domnich, Yu.G. Gogotsi
• p783 Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)   [ 570 K ]
  Authors: Hans Joachim Müssig, Jaroslaw Dąbrowski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.J. Osten
• p789 Structural Investigations of Praseodymium Oxide Epitaxially Grown on Silicon   [ 449 K ]
  Authors: P. Zaumseil, E. Bugiel, J.P. Liu, H.J. Osten
• p795 1D-ACAR Studies of As-Grown Impurity Centers in Silicon   [ 357 K ]
  Authors: N.Yu. Arutyunov, V.Yu. Trashchakov
• p801 Characterization of Interfacial States at Silicon Bicrystals   [ 349 K ]
  Authors: G.N. Kamaev, S.V. Golod, E.M. Skok, A.K. Fedotov, A.V. Mazanik
• p807 Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current   [ 425 K ]
  Authors: C. Grazzi, M. Albrecht, Horst P. Strunk, Z. Bougrioua, I. Moerman