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Articles by author: V. Bondarenko

• Amorphous Silicon Photodetectors for Silicon Based Optical Waveguides
  Published in: Light Emission from Silicon (p45)
• Assessment of "Normally On" and "Quasi On" SiC VJFET's in Half-Bridge Circuits
  Published in: Silicon Carbide and Related Materials 2003 (p1153)
• Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
  Published in: Silicon Carbide and Related Materials 2003 (p885)
• Fast Switching (41 MHz), 2.5 mΩ•cm², High Current 4H-SiC VJFETs for High Power and High Temperature Applications
  Published in: Silicon Carbide and Related Materials 2005 (p1183)
• Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
  Published in: Silicon Carbide and Related Materials 2004 (p885)
• Gettering Technology Based on Porous Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p405)
• Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface
  Published in: Defects in Semiconductors 17 (p583)
• Humidity Sensor Based on Partially Oxidized Porous Silicon
  Published in: Light Emission from Silicon (p75)
• Investigation of Two-Stage Activation Annealing of Al-Implanted 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials 2003 (p921)
• RF and DC Characterization of Self-Aligned L-Band 4H-SiC Static Induction Transistors
  Published in: Silicon Carbide and Related Materials 2005 (p1223)
• SiC Smart Power JFET Technology for High-Temperature Applications
  Published in: Silicon Carbide and Related Materials 2005 (p1207)
• Visible and IR Photoluminescence of Erbium Doped Porous Silicon Films
  Published in: Light Emission from Silicon (p94)