Keyword: "Interface States (or Traps)"
Papers by keyword:
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Paper Title Page

Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation

Authors: Hiroaki Saitoh, Akinori Seki, Akira Manabe, Tsunenobu Kimoto

659

Interface State Density at Implanted 6H SiC/SiO2 MOS Structures

Authors: M. Bassler, Valeri V. Afanas'ev, Gerhard Pensl

861

Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors

Authors: Emil Arnold, Nudjarin Ramungul, T. Paul Chow, Mario Ghezzo

1013

Interface States in Abrupt SiO2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters

Authors: Toshiharu Ohnuma, Hidekazu Tsuchida, Tamotsu Jikimoto

1297

Interface States in SiO2/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination

Authors: Toshiharu Ohnuma, Hidekazu Tsuchida, Tamotsu Jikimoto, Atsumi Miyashita, Masahito Yoshikawa

573

Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers

Authors: Vinayak Tilak, Kevin Matocha, Greg Dunne

801

Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs

Authors: N.S. Saks, S.S. Mani, Anant K. Agarwal

1113

Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping

Authors: Tetsuo Hatakeyama, Takatoshi Watanabe, Junji Senzaki, Makoto Kato, Kenji Fukuda, Takashi Shinohe, Kazuo Arai

829

Investigation of Lateral RESURF, 6H-SiC MOSFETs

Authors: Anant K. Agarwal, N.S. Saks, S.S. Mani, V.S. Hegde, P.A. Sanger

1307

Investigation of SiO2-SiC Interface by High-Resolution Transmission Electron Microscope

Authors: Sima Dimitrijev, Ji Sheng Han, Jin Zou

975

Showing 81 to 90 of 143 Papers
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