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Papers by Keyword: Interface States (or Traps)

Paper TitlePage

Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Authors: Masahito Yoshikawa, Mirei Satoh, Takeshi Ohshima, Hisayoshi Itoh

1009

On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures

Authors: H.Ö. Ólafsson, Fredrik Allerstam, E.Ö. Sveinbjörnsson

1005

New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures

Authors: H.Ö. Ólafsson, E.Ö. Sveinbjörnsson, T.E. Rudenko, V.I. Kilchytska, I.P. Tyagulski, I.N. Osiyuk

1001

Improving 4H-SiC/SiO₂ Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO₂ and Annealing

Authors: Xie Wen Wang, H.M. Bu, B.L. Laube, C. Caragianis-Broadbridge, T.P. Ma

993

Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation

Authors: Eiichi Okuno, Shinji Amano

989

N₂O Processing Improves the 4H-SiC:SiO₂ Interface

Authors: Lori A. Lipkin, Mrinal K. Das, John W. Palmour

985

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Authors: Mrinal K. Das, G.Y. Chung, John R. Williams, N.S. Saks, Lori A. Lipkin, John W. Palmour

981

Passivation of the Oxide/4H-SiC Interface

Authors: Philippe Jamet, Sima Dimitrijev, P. Tanner

973

Passivation of the 4H-SiC/SiO₂ Interface with Nitric Oxide

Authors: John R. Williams, G.Y. Chung, Chin Che Tin, K. McDonald, D. Farmer, R.K. Chanana, Robert A. Weller, Sokrates T. Pantelides, O.W. Holland, Mrinal K. Das, Leonard C. Feldman

967

Barrier-Controlled Transport in Highly Doped Microcrystalline Silicon: Role of Interface States

Authors: S. Brehme, P. Kanschat, T. Weis, K. Lips, W. Fuhs

225