The Study of Direct Tunneling Current in Strained MOS Device with Silicon Nitride Stack Gate Dielectric

Li Jun Xu; He Ming Zhang; Hui Yong Hu; Xiao Bo Xu; Jian Li Ma

doi:10.4028/www.scientific.net/AMM.110-116.5442

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 110-116The Study of Direct Tunneling Current in Strained...

The Study of Direct Tunneling Current in Strained MOS Device with Silicon Nitride Stack Gate Dielectric

Abstract:

As the size of MOS device scaled down to sub 100nm, the direct tunneling current of gate oxide increases more and more. Using silicon nitride as gate dielectric can solve this problem effectively in some time due to the dielectric constant of silicon nitride is larger than silica’s.This paper derived the dielectric constant of silicon nitride stack gate dielectric,and simulated the direct tunneling current of strained MOS device with silica and silicon nitride gate dielectric through device simulation software ISE TCAD10.0,studied the direct tunneling current of strained MOS device with silicon nitride stack gate dielectric change with the variation of some parameters and the application limit of silicon nitride material.

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Periodical:

Applied Mechanics and Materials (Volumes 110-116)

Pages:

5442-5446

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.110-116.5442

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Online since:

October 2011

Authors:

Li Jun Xu, He Ming Zhang, Hui Yong Hu, Xiao Bo Xu, Jian Li Ma

Keywords:

Dielectric, Direct Tunneling Current, MOS Device, Silicon Nitride

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