Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology

Xiao Bo Xu; He Ming Zhang; Hui Yong Hu; Shan Shan Qin; Jiang Tao Qu

doi:10.4028/www.scientific.net/AMM.110-116.5452

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 110-116Collector Resistance of Accumulation-Subcollector...

Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology

Abstract:

An analytical expression for collector resistance of a novel vertical SiGe partially-depleted accumulation-subcollector HBT on thin SOI is obtained. Supported by simulation result, the resistance decreases quickly with the increase of substrate-collector bias and improves the transit frequency dramatically. The model is found to be significant in the design and simulation of 0.13 μm millimeter wave SiGe SOI BiCMOS technology.

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Periodical:

Applied Mechanics and Materials (Volumes 110-116)

Pages:

5452-5456

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.110-116.5452

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Online since:

October 2011

Authors:

Xiao Bo Xu, He Ming Zhang, Hui Yong Hu, Shan Shan Qin, Jiang Tao Qu

Keywords:

Collector Resistance, Herojunction Bipolar Transistor (HBT), SiGe, Substrate Bias Effect

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References

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