Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology

Abstract:

Article Preview

An analytical expression for collector resistance of a novel vertical SiGe partially-depleted accumulation-subcollector HBT on thin SOI is obtained. Supported by simulation result, the resistance decreases quickly with the increase of substrate-collector bias and improves the transit frequency dramatically. The model is found to be significant in the design and simulation of 0.13 μm millimeter wave SiGe SOI BiCMOS technology.

Info:

Periodical:

Edited by:

Wu Fan

Pages:

5452-5456

DOI:

10.4028/www.scientific.net/AMM.110-116.5452

Citation:

X. B. Xu et al., "Collector Resistance of Accumulation-Subcollector Transistors for SOI SiGe BiCMOS Technology", Applied Mechanics and Materials, Vols. 110-116, pp. 5452-5456, 2012

Online since:

October 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.