The New Material Structure Design and Research of the GaAs-Based Resonant Tunneling Diodes

Abstract:

Use MBE technology grew three different structures’ RTD to get a contrast test on device with different thickness of well structure’s DC character,they all grew on semi-insulating GaAs substrates, and use I-V analysis instrument tested the I-V character of the RTD in room temperature, in the test results , the PVCR of the best device was up to 7.1,VP is reduced to 0.4V ,then we analyzed the relationship between the device material structure and I-V character , this paper provided a reference for the better performance of the RTD structure design.

• Periodical: Applied Mechanics and Materials (Volumes 110-116)
• Pages: 5471-5475
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.110-116.5471
• Online since: October 2011
• Authors: Jie Wang, Bin Zhen Zhang
• Keywords: GaAs, IV Characteristic, Material Structure, Resonant Tunneling Diodes

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