Studies on the Preparation and Characterization of Ferroelectric PLZT Film Capacitors

Abstract:

(Pb_0.92La_0.08)(Zr0.65Ti_0.35) O₃(PLZT) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrates to create transparent capacitor by the sol-gel method following annealing process. X-ray diffraction analysis shows that the PLZT thin films are polycrystalline with a single perovskite phase at 650^°C. The ferroelectric, electrical and optical properties of these films were investigated in detail as a function of annealing temperature. Measurements with the PLZT films annealed at 650^°C yielded the following: relative permittivity≈775 and dielectric loss (tanδ) ≈0.054, leakage current of 7.1× 10-9A, and remanent polarization of 38 μC/cm2 and the coercive electric field of 55 kV/cm and transparency of 88%. The pure perovskite films exhibit better properties than those films which have some fraction of pyrochlore phase.

• Periodical: Applied Mechanics and Materials (Volumes 110-116)
• Pages: 5483-5486
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.110-116.5483
• Online since: October 2011
• Authors: Li Liu, Hua Wang, Ji Wen Xu, Ming Fang Ren, Ling Yang
• Keywords: Electrical Properties, Optical Property, PLZT Film, Sol-Gel (SG), X-Ray Diffraction (XRD)

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