Studies on the Preparation and Characterization of Ferroelectric PLZT Film Capacitors

Abstract:

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(Pb0.92La0.08)(Zr0.65Ti0.35) O3(PLZT) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrates to create transparent capacitor by the sol-gel method following annealing process. X-ray diffraction analysis shows that the PLZT thin films are polycrystalline with a single perovskite phase at 650°C. The ferroelectric, electrical and optical properties of these films were investigated in detail as a function of annealing temperature. Measurements with the PLZT films annealed at 650°C yielded the following: relative permittivity≈775 and dielectric loss (tanδ) ≈0.054, leakage current of 7.1× 10-9A, and remanent polarization of 38 μC/cm2 and the coercive electric field of 55 kV/cm and transparency of 88%. The pure perovskite films exhibit better properties than those films which have some fraction of pyrochlore phase.

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Periodical:

Edited by:

Wu Fan

Pages:

5483-5486

DOI:

10.4028/www.scientific.net/AMM.110-116.5483

Citation:

L. Liu et al., "Studies on the Preparation and Characterization of Ferroelectric PLZT Film Capacitors", Applied Mechanics and Materials, Vols. 110-116, pp. 5483-5486, 2012

Online since:

October 2011

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$35.00

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