[1]
Shan F K, Kim B I, Liu G X, Liu Z F, Sohn J Y, Lee W J, Shin B C and Yu Y S, Blueshift of near band edge emission in Mg doped ZnO thin films and aging,J. Appl. Phys. vol. 95, May 2004, pp.4772-4776, doi: 10. 1063/1. 1690091.
DOI: 10.1063/1.1690091
Google Scholar
[2]
A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, and H. Koinuma, MgxZn1-xO as a II–VI widegap semiconductor alloy, Appl. Phys. Lett. vol. 72. May 1998, pp.2466-2468, doi: S0003-6951(98)04219-3.
DOI: 10.1063/1.121384
Google Scholar
[3]
A K Das, P Misra and L M Kukreja, Effect of Si doping on electrical and optical properties of ZnO thin films grown by sequential pulsed laser deposition, J. Phys. D: Appl. Phys. vol. 42. July 2009, pp.1-7, doi: 10. 1088/0022-3727/42/16/165405.
DOI: 10.1088/0022-3727/42/16/165405
Google Scholar
[4]
D.J. Qiu, H.Z. Wu, A.M. Feng, Y.F. Lao, N.B. Chen, T.N. Xu, Annealing effects on the microstructure and photoluminescence properties of Ni-doped ZnO films, Appl. Surf. Sci. 222(2004), p.263–268, doi: 10. 1016/j. apsusc. 2003. 08. 015.
DOI: 10.1016/j.apsusc.2003.08.015
Google Scholar
[5]
X.B. Wang, C. Song, K.W. Geng, F. Zeng, F. Pan , Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering, Appl. Surf. Sci. 253(2007), p.6905–6909, doi: 10. 1016/j. apsusc. 2007. 02. 013.
DOI: 10.1016/j.apsusc.2007.02.013
Google Scholar
[6]
M. Öztas, M. Bedir, Thickness dependence of structural, electrical and optical properties of sprayed ZnO: Cu films, Thin Solid Films. 516 (2008) , p.1703–1709, doi: 10. 1016/j. tsf. 2007. 05. 018.
DOI: 10.1016/j.tsf.2007.05.018
Google Scholar
[7]
Ming-Lung Tu, Yan-Kuin Su and Chun-Yang Ma, Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering, J. Appl. Phys. 100(2006), pp.053705-4, doi: 10. 1063/1. 2337766.
DOI: 10.1063/1.2337766
Google Scholar
[8]
J. B. Wang, H. M. Zhong, Z. F. Li, and Wei Lu, Raman study of N+-implanted ZnO, Appl. Phys. Lett. 88. (2006) , pp.101913-3, doi: 10. 1063/1. 2185261.
DOI: 10.1063/1.2185261
Google Scholar
[9]
Yoshitaka Nakano, Takeshi Morikawa, Takeshi Ohwaki, and Yasunori Taga, Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films, Appl. Phys. Lett. 88 (2006).
DOI: 10.1063/1.2198489
Google Scholar
[10]
L. G. Wang and A. Zunger, Cluster-Doping Approach for Wide-Gap Semiconductors: The Case of p-Type ZnO, Phys. Rev. Lett. vol. 90. June 2003, pp.256401-4, doi: 10. 1103/PhysRevLett. 90. 256401.
DOI: 10.1103/physrevlett.90.256401
Google Scholar
[11]
F. Zhuge, L. P. Zhu, Z. Z. Ye, D. W. Ma, J. G. Lu, J. Y. Huang, F. Z. Wang, and Z. G. Ji, ZnO p-n homojunctions and ohmic contacts to Al–N-co-doped p-type ZnO, Appl. Phys. Lett. 87 (2005) , pp.092103-3 , doi: 10. 1063/1. 2012521.
DOI: 10.1063/1.2012521
Google Scholar
[12]
J. G. Lu, Y. Z. Zhang, Z. Z. Ye, L. P. Zhu, L. Wang, and B. H. ZhaoQ, Low-resistivity, stable p-type ZnO thin films realizedusing a Li–N dual- acceptor doping method, Appl. Phys. Lett. 88(2006), pp.222114-3, doi: 10. 1063/1. 2209191.
DOI: 10.1063/1.2209191
Google Scholar
[13]
Z. Jiwei, Z. Liangying, Y. Xi, The dielectric properties and optical propagation loss of c-axis oriented ZnO thin films deposited by sol-gel process, Ceram. Int. 26 (2000), pp.883-885, doi: S0272-8842(00)00031-6.
DOI: 10.1016/s0272-8842(00)00031-6
Google Scholar
[14]
D.C. Reynolds, D.C. Look, B. Jobai, C.W. Litton, T.C. Collins,W. Harsch,G. Cantwell, Neutral-donor–bound-exciton complexes in ZnO crystals, Phys. Rev. B . vol. 57, May 1998, pp.12151-12155, doi: S0163-1829(98)02319-4.
DOI: 10.1103/physrevb.57.12151
Google Scholar
[15]
Yow-Jon Lin , Wei-Chung Chen , Hsing-Cheng Chang , Chia-Jyi Liu , Zhi-Ru Lin, Analysis of the band-edge luminescence degradation for ZnO films with Al doping prepared by the sol–gel method, Journal of Crystal Growth . 310 (2008).
DOI: 10.1016/j.jcrysgro.2008.06.064
Google Scholar
[16]
Jeong T S, Han M S, Youn C J and Park Y S , Raman scattering and photoluminescence of As ion-implanted ZnO single crystal,J. Appl. Phys. vol. 96, July 2004, pp.175-179, doi: 10. 1063/1. 1756220.
DOI: 10.1063/1.1756220
Google Scholar
[17]
C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz E.M. Kaidashev, M. Lorenz, M. Grundmann, Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li , Appl. Phys. Lett. vol. 83, Sep. 2003, pp.1974-1796.
DOI: 10.1063/1.1609251
Google Scholar
[18]
A. Kaschner, U. Haboeck, Martin Strassburg, Matthias Strassburg, G. Kaczmarczyk,A. Hoffmann, and C. Thomsen, Nitrogen-related local vibrational modes in ZnO: N , Appl. Phys. Lett. vol. 80, March. 2003, pp.1909-1911, doi: 10. 1063/1. 1461903.
DOI: 10.1063/1.1461903
Google Scholar