Characterization of Nd:Y3Al5O12 Thin Films Prepared by Electron Beam Evaporation Deposition

Hao Ren; Qun Zeng; Xi Hui Liang

doi:10.4028/www.scientific.net/AMM.320.150

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 320Characterization of Nd:Y3Al5O12 Thin Films...

Characterization of Nd:Y₃Al₅O₁₂ Thin Films Prepared by Electron Beam Evaporation Deposition

Abstract:

Nd:YAG thin films have been prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer. The crystallization of Nd:YAG thin films was improved after annealing at 1100 °C for 1 hour in vacuum. Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of ⁴F_3/2⁴I_11/2 of Nd³⁺ in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

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Periodical:

Applied Mechanics and Materials (Volume 320)

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150-154

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https://doi.org/10.4028/www.scientific.net/AMM.320.150

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May 2013

Authors:

Hao Ren, Qun Zeng, Xi Hui Liang

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Electron Beam Evaporation, Nd:YAG Thin Film, Photoluminescence (PL)

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