Coulomb Effects in the Ge/Si Single Quantum Dot

Abstract:

Using scanning probe microscopy (SPM) technique, the electronic properties of Ge/Si quantum dots (QDs) have been characterized. Our results demonstrate that a layer of a disordered structure is formed between the Ge/Si QDs and the surface of Si substrate due to the defects in QDs during the bias voltage applied. That is, a double tunneling system in which the Coulomb blocking effect can be observed is constructed during the electronic measurement for the single quantum dot (SQD).

• Periodical: Applied Mechanics and Materials (Volume 320)
• Pages: 176-180
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.320.176
• Online since: May 2013
• Authors: Li Hong Zhang, Chong Wang, Jie Yang, Jin Tao Yao, Yu Yang
• Keywords: Coulomb Characteristics, Ge/Si Single QD, I-V Curve

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