Fabrication of Uniformly Growing Graphene Films via the Dip-Coating Method

Juan Yang; Hong Bo Sun; Dan Li

doi:10.4028/www.scientific.net/AMM.320.185

Paper Titles

Characterizing Dielectric Constant of Ceramics by Mie Resonance Theory
p.162

Advance in the Growth of Ordered Ge/Si Quantum Dots
p.168

Coulomb Effects in the Ge/Si Single Quantum Dot
p.176

Preparation of Sc₂Mo₃O₁₂ and Characterization of its Negative Thermal Expansion Property
p.181

Fabrication of Uniformly Growing Graphene Films via the Dip-Coating Method
p.185

Pyroelectric Properties of SBN/BST by Powder-Sol Method
p.190

Electrodeposition of ZnO Thin Films with Controllable Impurities and Microstructures
p.196

Study on Microstructure and Ferroelectricity of Strontium Barium Titanate Thin Films Prepared by Sol-Gel Processing
p.202

Dielectrophoresis Response and Manipulation of TiO₂ Particles
p.208

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 320Fabrication of Uniformly Growing Graphene Films...

Fabrication of Uniformly Growing Graphene Films via the Dip-Coating Method

Abstract:

The graphene (GE) films were fabricated in this paper through the deposition of graphene oxide (GO) sheets onto the quartz slide by means of dip-coating technique, followed by thermal annealing. The growth process and transmittance of the film were monitored by ultraviolet and visible spectrophotometer (UV-Vis), the surface morphology and structure were investigated by Atomic force microscopy (AFM), Scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman. The sheet resistance of the film was also tested and results showed that the sheet resistance is about 60 kΩ^-1 and the transmittance is as high as 81 % (at 550 nm).

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Periodical:

Applied Mechanics and Materials (Volume 320)

Pages:

185-189

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.320.185

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Online since:

May 2013

Authors:

Juan Yang, Hong Bo Sun, Dan Li

Keywords:

Dip-Coating, Graphene Film, Sheet Resistance, Transmittance

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