Advance in the Growth of Ordered Ge/Si Quantum Dots

Abstract:

Recent progress in the growth of ordered Ge/Si quantum dots (QDs) is reviewed. We focus on the detailed progresses of the Ge/Si multiple layers QDs and the preparation of Ge/Si QDs by ion beam irradiation. In addition, the growth of Ge/Si QDs on patterned substrate by using different preparation methods are also well discussed, such as nanosphere lithography technology, extreme ultra-violet interference lithography technology, nanoimprint lithography technology, etc.

• Periodical: Applied Mechanics and Materials (Volume 320)
• Pages: 168-175
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.320.168
• Online since: May 2013
• Authors: Hai Peng Wang, Chong Wang, Jie Yu, Jie Yang, Yu Yang
• Keywords: Ge/Si Quantum Dot, Ion Beam Irradiation, Multiple Layers, Ordering, Patterned Substrate

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