Enhancement-Mode GaN MOS-HEMT with Quaternary InAlGaN-Barrier

Abstract:

The quaternary InAlGaN-barrier GaN MOS-HEMT (high-electron-mobility transistor) with enhancement mode operation was displayed as V_th=0.65V and the maximum drain current ~ 40 mA/mm at V_DS=10V with L_G=15μm and L_GD=20μm. The measured rocking-curve and RSM (reciprocal space mapping) for epitaxial quality was confirmed the composition of the quaternary and analyzed the relaxation between InAlGaN-barrier and GaN Buffer layer. The surface roughness of InAlGaN was observed by AFM (Atomic force microscopy). The positive polarity of V_th was obtained with the gate lengths 3-30μm, and short channel effect was discussed.

• Periodical: Applied Mechanics and Materials (Volume 870)
• Pages: 389-394
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.870.389
• Online since: September 2017
• Authors: P.G. Chen, H.H. Chen, M. Tang, Min Hung Lee*
• Keywords: Enhancement-Mode, GaN MOS-HEMT, Quaternary

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